Abstract
Two-dimensional (2D) materials are attractive candidates for high-frequency electronic devices, due to their appreciable band gaps and high carrier mobilities and low effective masses. Using a well-calibrated ballistic quantum transport simulator along with simple, intuitive device physics, this study analyzes a large set of 2D materials for rf performance and its dependence on both intrinsic (material) and extrinsic (device) parameters. Phosphorene stands out as the best 2D material in this context. This work not only guides the choice of materials for rf transistors, but also highlights the device parameters critical to experimentally realizing high rf performance.
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