Performance projection and scalable loss model of SiC MOSFETs and SiC Schottky diodes

Abstract

Silicon Carbide (SiC) power semiconductor devices are expected to achieve better performance than silicon power devices in high-switching-frequency, high-power and high-temperature applications. Several commercial SiC MOSFETs and SiC Schottky diodes are available on the market, and SiC power devices with higher power ratings are expected in the future. This paper presents a performance projection method and a scalable loss model for both SiC MOSFETs and SiC Schottky diodes. The performance projection method provides estimated parameters also for upcoming devices with higher power ratings than currently commercially available. These parameters are used in the scalable loss models to estimate power losses. The performance projection and scalable loss model are established based on data from Cree's product datasheets. The loss breakdown analysis of a SiC DC-DC boost converter is presented to demonstrate the proposed performance projection method and scalable loss model.