Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

Abstract

The intrinsic performance of “type-II” InP/GaAsSb double heterojunction bipolar transistors (DHBTs) toward and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1D full-band, atomistic quantum transport calculations to shed light on future DHBT generations whose dimensions are decreased step-by-step, starting from the current device configuration. Simulations predict that a peak transit frequency fT,peak of around 1.6 THz could be reached in aggressively scaled type-II DHBTs with a total thickness of 256 nm and an emitter width WE of 37.5 nm. The corresponding breakdown voltage BVCEO is estimated to be 2.2 V. The investigations are put in perspective with two DHBT performance limiting factors, self-heating, and breakdown characteristics.