Performance prediction for submicron GaAs SDFL logic

Abstract

We report the results of the computer simulation of GaAs SDFL (Schottky diode FET logic) ring oscillators which takes into account transient effects leading to higher electron velocity in short devices and the fringing capacitances. The results indicate that the delay time decreases from 53.6 ps for 1 µm devices to 28.1 ps for 0.5 µm gate devices, and to 18.6 ps for 0.25 µm devices, with power-delay products of 229, 70, and 27.1 fJ, respectively. When the transient effects are not taken into account, the power-delay product remains nearly the same but the delay time increases with the largest increase to 27 ps for .25 µm devices.