Abstract
Kagome lattice materials are layered two-dimensional (2D) materials in which atoms are arranged in a trihexagonal tiling lattice pattern. It has been suggested that the Kagome lattice can possess topologically non-trivial band structures. By performing atomistic quantum transport simulations, we show that the topological edge modes of a Fe3Sn Kagome nanoribbon have excellent carrier transport properties, with a mean free path several orders of magnitude larger than that of the bulk modes. Vertical stacking of intercalated Kagome layers can further boost the conductance per unit width. As a result, the 2D Kagome lattice materials offer low resistivity and promising potential for interconnect applications in the sub-10nm regime.
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