Abstract
The performance optimization of GaAs-based photomixers using novel device structures is reported. Low-temperature grown (LT) GaAs devices with recessed interdigitated finger contacts, which improve the electric field distribution in the active region, were investigated. Further, the devices with an enhanced mixing area using finger contacts integrated into the coplanar stripline were experimentally verified. The output power of such photomixers was twice of that with conventional surface contacts. High-energy nitrogen implanted GaAs was used as an alternative to LT GaAs, and a further increase of the output power was observed. Measured power level of 2.6 μW at 850 GHz was higher than that reported before for any photomixer in the THz region.
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