Abstract
Physical device modelling of a monolithic CdZnO based double quantum well LED is presented. The aim of this paper is to achieve an LED structure with enhanced Internal Quantum Efficiency (IQE) and Full Width at Half Maximum (FWHM) by optimizing two active layers. The proposed LED structure contains dual quantum well of CdZnO material which emits light in Violet (400nm) spectrum. Physical device modelling and characterization of the structure is done by using industrial standard device simulation software Silvaco TCAD. Results of Electron Hole Concentration and Radiative Recombination Rate shows efficient carrier confinement in active region of structure. IQE upto 95% and FWHM of 14.7nm is achieved by optimizing cadmium composition in CdZnO active layers, doping concentrations and thicknesses of barrier layers.
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