Performance optimisation of n-i-p type CH3NH3PbI3 based perovskite solar cells using SCAPS 1-D device simulation

Abstract

Perovskite solar cells (PSCs) are emerging photovoltaic technologies with an efficiency of over 25%. PEDOT:PSS is the most commonly used hole transport material in the p-i-n type perovskite solar cell because the PEDOT:PSS dispersion is typically water-based material. Water-free PEDOT:PSS composites are used in the n-i-p architecture. The inverted PEDOT:PSS-based PSCs show 200 mV less open circuit voltage (VOC) as compared to conventional PSCs. Herein, the n-i-p type perovskite solar cell containing PEDOT:PSS as a hole transport layer is adopted to overcome the problem of open circuit voltage loss in an inverted solar cell. The design and analysis of n-i-p based perovskite solar cell is carried out using the 1D-Solar Cell Capacitance Simulator. The solar cell performance is improved by optimising the different parameters of perovskite solar cell. The optimised n-i-p structure solar cell has achieved the best power conversion efficiency of over 18% with 1.27 V open-circuit voltage for 350 nm thickness of the absorber layer. Therefore, the results provide a pathway to overcoming the voltage loss in PEDOT:PSS-based inverted PSCs by adopting a conventional device structure.