Performance of Unstuck ¿ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10 GHz

Abstract

This paper shows the capability of AlGaN/GaN high electron mobility transistors (HEMTs) on (001) oriented silicon substrate with 300 nm gate length using unstuck Gamma gate for low cost device microwave power applications. The total gate periphery of 300 mum, exhibits a maximum DC drain current density of 600 mA/mm at VDS=7V with an extrinsic transconductance (gm max) around 200 mS/mm. An extrinsic current gain cutoff frequency (fT) of 37 GHz and a maximum oscillation frequency (fmax) of 55 GHz are deduced from Sij-parameters measurements. At 10 GHz, an output power density of 2.9 W/mm associated to a power added efficiency (PAE) of 20% and a linear gain of 7 dB are obtained at VDS=30 V and VGS=-2 V.