Performance of the illumination dependent electrical and photodiode characteristic of the Al/(GO:PTCDA)/p-Si structures

Abstract

In this our study, we fabricated an Al/p-Si metal semiconductor (MS) structure with perylenetetra carboxylic dianhydride (PTCDA) and graphene oxide (GO) interface. The morphology of the PTCDA and GO organic semiconductor powder structures were examined by scanning electron microscopy (SEM).The main values such as ideality factors (n), rectification ratios (RR), saturation currents (I0) and barrier heights (Φbo) were extracted from I–V characteristics and discussed in details by thermionic emission (TE) theory in the various illumination conditions. The illumination dependent photodiode and photoresponsitity properties of Al/(GO:PTCDA)/p-type Si photo diode structures were investigated using current–voltage (I–V) characteristics in dark, room light and different light intensities, in the illumination range of 20–100 mW cm−2 by increments of 20 mW cm−2at room temperature (300 K).The photodiodes produced had good rectifying characteristics, however the value of rectifying ratios (RR) dropped as the light power intensity increased. According to the results, the photodiodes had a linear photocurrent (Iph), excellent detectivity and responsivity. Furthermore, the some basic electrical and photovoltaic values such as n, I0, Φbo, Voc, Isc, and Pmaxwere acquired as 5.82, 7.64×10−7A, 0.624 eV, 0.33 V, 2.24×10−5A and 3.41×10−6W under 100 mW/cm2light intensity, respectively. Therefore, the experimental research shown that Al/PTCDA:GO/p-Si photodiode structures can be improved for photodiode applications.