Abstract
Considering the increase of the driving current for nano-node MOSFET devices, source/drain (S/D) site etched and refilled with SiGe material is a promising process to promote the channel mobility due to the tensile or compressive effect. Using SiGe-S/D process comparing the performance with Si-S/D and control devices on (110) wafer to probe the nano-scale mass-production possibility is a good integration. Besides the discussion in the room temperature, the device characteristics with temperature dependence are more impressive. Through analysis for the cumulated data, the temperature impact in the performance of long channel MOSFETs is higher than that in the short channel ones. The phenomena can be attributed to the tensile or compressive effect to n- or p-MOSFETs with phonon scattering disturbance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
