Abstract
Intrinsic microcrystalline silicon (μc-Si:H) films deposited in a radio frequency (rf) glow discharge of monosilane highly diluted with hydrogen were applied to p-i-n solar cells. The open circuit voltage ( V oc) decreased and the short circuit current ( I sc) increased with the increase of crystalline fraction in the film. The experimental results suggested that the crystalline boundary affected fill factor (FF) and light degradation. It turned out that cells with high stability could be obtained in the crystalline fraction region as low as about 33%. A tandem cell with the intrinsic bottom layer of 33% crystalline fraction had the initial and the stabilized efficiency of 9.4% and 8.5%, respectively.
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