Abstract
Laser Produced Plasma (LPP) light source is widely accepted to be the most promising solution for the 13.5 nm high power light source for high volume manufacturing (HVM) EUV lithography. We have been developing LPP systems using CO2 laser and tin (Sn) target for extreme ultraviolet (EUV) light source since 2003. In the development of LPP light source, various kinds of original technologies, such as the combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulse shooting , and debris mitigation with magnetic field have been developed in Gigaphoton Inc.. By the use of Proto #2 device, 108 W EUV power (clean power at intermediate focus (I/F) in burst mode) under 80 kHz, 24 h operation was demonstrated. Currently, we are constructing the first practical source for HVM “GL200E Pilot #1” aiming for 250 W EUV output power by 27 kW pulsed CO2 laser system.
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