Abstract
An analysis of stacked thermophotovoltaic elements at moderate temperature is reported. The motivation is for application to microsystems. Various numbers of layers are considered, with a variety of temperatures (varying from 560 to 360 K ) on the higher-temperature end. At the lower-temperature end, the temperature is always held at 300 K. It is assumed that the photovoltaic (PV) material is thin, but the thickness is considered. The PV material investigated in an earlier single-layer study (In0:8Ga0:2As) is considered, as well as Hg 0:8Cd0:2Te. The latter demonstrates absorption and PV conversion at longer wavelengths than the former. In all cases, the emitter surface of the TPV pairis taken to be black. It is shown that both the poweroutput and the efe ciency of thesystem increase with layering.
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