Abstract
Conventional silicon-based optical leaky-wave antennas (OLWAs) have been investigated in the literature as high directivity narrow-beam radiators with steering capability and designed for 1550 nm operation using single-grating layer. In this paper, two modifications are introduced to the conventional silicon-based OLWA. The first modification is to redesign the structure for 1300 nm operation and to compare the radiation parameters with those of the 1550 nm counterpart. The second modification is to design and investigate the performance of a double-grating OLWA which is useful for double-beam steering.
Highlights
Silicon-based photonics have generated nowadays a huge interest mainly for optical telecommunications and increasingly for sensing The development of elementary passive and active components has reached such a performance level that the combination of these building blocks can lead to the development and the commercialization of high performance transceivers [1] This progress is mainly driven by the compactness of the integrated optical components and the fact that these devices can be fabricated using the mature complementary metal-oxide-semiconductor (CMOS) fabrication infrastructure, resulting in high yield and high volume fabrication [2]
The radiation parameters of the reported antenna can be controlled by introducing excess carriers in the silicon via electronic or optical injection [7,8]
These results lead to higher radiation efficiency and lower total efficiency for the double-grating antenna (DGA) according to eqn.s. 1 and 2
Summary
Silicon-based photonics have generated nowadays a huge interest mainly for optical telecommunications and increasingly for sensing The development of elementary passive and active components has reached such a performance level that the combination of these building blocks can lead to the development and the commercialization of high performance transceivers [1] This progress is mainly driven by the compactness of the integrated optical components and the fact that these devices can be fabricated using the mature complementary metal-oxide-semiconductor (CMOS) fabrication infrastructure, resulting in high yield and high volume fabrication [2]. Results corresponding to a single-grating counterpart are included in this table for comparison purposes Investing these results highlights the following facts (i) The DGA radiates two main beams having identical radiation characteristics. (iv) The DGA has higher reflection coefficient (i.e., S11) at the input (feeding) fact of the waveguide compared to the SGA This result is attributed to the increase of refractive index of the core region since two silicon perturbations are inserted in transversal direction (normal to the direction of propagation). Note that the DGA is characterized by higherPr/Pin and lower Ploss /Pin compared with the SGA These results lead to higher radiation efficiency and lower total efficiency for the DGA according to eqn.s. 1 and 2. (a) 3D farfield pattern (b) yz plane (c) xy plane (d) xz plane
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