Abstract
Fabrication of single crystal hydrogen-terminated diamond MOSFET with YSZ/Al2O3 bilayer dielectrics has been successfully carried out. The flat band voltage shift and hysteresis voltage were small in the capacitance-voltage curve. The dielectric constant of YSZ/Al2O3 was calculated, and the fixed and trapped charge densities in dielectrics were deduced based on the capacitance-voltage curve. According to the transfer characteristics curve, on/off ratio and breakdown voltage were extracted. Distinct pinch-off and p-type channel were shown in the output characteristics curve. The effective mobility was evaluated to be 80.4 cm2 V−1 s−1 at VGS = −1.5 V based on the relation between on-state resistance and 1/|VGS-VTH|.
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