Abstract
High‐performance III–V photovoltaic devices have the potential for various applications; however, their high production cost represents a challenge for market expansion. Hydride vapor phase epitaxy (HVPE) is a fabrication technology that can reduce the epitaxial growth cost of III–V compound semiconductors. This study demonstrates the performances of HVPE‐grown GaInP photovoltaic devices for solar and indoor photovoltaic applications. Herein, HVPE‐grown GaInP photovoltaic devices with AlInP frontside and AlGaInP backside passivation layers are fabricated for the first time. The developed GaInP photovoltaic device measured under air mass 1.5 global solar spectrum illumination achieves an independently certified power conversion efficiency of 17.3%, which is a new record efficiency among HVPE‐grown GaInP single‐junction solar cells. Furthermore, the GaInP photovoltaic device grown using HVPE exhibits a high power conversion efficiency (34.7–37.1%) under an illumination of 500–2000 lux, respectively, emitted by a white light‐emitting diode. These results demonstrate that HVPE‐grown GaInP photovoltaic devices can be used in low‐intensity indoor light energy harvesting systems.
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