Abstract
In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector are also compared and discussed. GaAs-based device shows a significant enhancement in detector with a better performance for a InGaAs photodetector compared to InP- based device. In addition, our results show that the device performance is influenced by the conduction band offset. This work proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high performance detector with optimally tuned band gap.
Highlights
In recent years, there are growing needs for near-infrared detectors, the most important applications are spectral imaging, such as earth observation, remote sensing and environmental monitoring [1] [2]
It is interesting that the GaAs substrate dark current becomes flat as the voltage increases from 0.1 to 0.5 V
As the reverse bias is increased to 0.5 V, the dark current density increase to 175 μA/cm2 and 110 μA/cm2, respectively
Summary
There are growing needs for near-infrared detectors, the most important applications are spectral imaging, such as earth observation, remote sensing and environmental monitoring [1] [2]. There is a strong need for high performance extended wavelength InGaAs detector at room temperature. The detailed characteristics of high indium content InGaAs detector, especially the dark current mechanism, have not been studied thoroughly. By increasing the In content of InGaAs, a quite large lattice mismatch between InGaAs epilayer and substrate is introduced and the dark current mechanism of the devices becomes complicated [3]. (2015) Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study.
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