Abstract
The single-pixel extended wavelength mesa InGaAs/InAsP SWIR detector was reported. The properties of the detector were characterized and analyzed at 160K~300K. At the operating temperature of 200K , the dark current density is 1.37×104 nA/cm2(@-10mV), the cut-off wavelength is 2.43μm, the peak detectivity and the peak responsivity are 3.44×1011cmHz1/2W-1 and 1.41A/W, respectively. Through analysis of the dark current source, the analysis of reverse dark current indicates that the tunneling current plays an important role at high voltage or relatively low temperature, and at near room temperature and low bias voltage, the generation-recombination current is the main current source instead of ohmic current based on thermal activation energy approximate to Eg/2 and the bias-voltage characteristic of the first order derivative of dark current, while the zero-voltage current mainly consists of the interface current and the thermal background current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
