Abstract
The effect of using an Intense Pulse Light system has been studied on zinc sulfide thin films and Cu(In, Ga)Se₂ solar cells. The deposition of thin films on the zinc sulfide buffer layer is carried out on the glass and Cu(In, Ga)Se₂ using the chemical bath deposition process. These zinc sulfide thin films were then subjected to treatment at different irradiation light intensities from 500 W to 2000 W, and then the effects on the layer were compared to a thermal annealed layer. The morphology and optical transmittance of the zinc sulfide layer were analyzed by field emission scanning electron microscopy and ultraviolet-visible spectrophotometry, respectively. This methodology was also applied to fabricate and investigate the efficiency, short-circuit current density, and external quantum efficiencies of the solar cells. This analysis shows that the treatments significantly change the properties of the zinc sulfide buffer layer and performance of the Cu(In, Ga)Se₂ thin film solar cells.
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