Performance of Common-Source, Cascode and Wilson Current Mirrors Implemented with Graded-Channel SOI nMOSFETs in a Wide Temperature Range

Abstract

This work presents an experimental comparative analysis of the behavior of current mirrors implemented with standard uniformly doped and Graded-Channel (GC) SOI nMOSFETs as a function of the temperature. Three different current mirror architectures were used, Common-source, Wilson and Cascode. The experimental results show that the use of Graded-Channel transistors promotes not only the increase of the output swing, but also the increase of the output resistance in all evaluated architectures, in comparison to the standard uniformly doped counterpart. Despite some degradation observed with the temperature reduction, current mirrors with GC transistors still present better performance than those implemented with standard SOI transistors.