Performance of commercial SOI driver in harsh conditions (up to 200°C)

Abstract

Power electronics based on wide band gap materials, such as silicon carbide (SiC) or gallium nitride (GaN), are nowadays capable of operation at increased ambient temperatures. High Temperature Intelligent Power Modules are unfortunately not available due to a lack of integrated driver able to withstand either harsh environment or enhanced junction temperature due to reduction in the cooling system. The most appropriated technology for such a driver seems to be Silicon on Insulator (SOI). The maximum operating temperature of commercial SOI devices with conventional packaging is usually 150°C up to 175°C as specified by manufacturers. In this paper, we actually try to observe the performance and de-ratings of these SOI circuits at temperatures above 175°C. Experimental characterization of commercial SOI MOSFET drivers from room temperature to 200°C and beyond is presented. Parameters such as output current amplitude, delay time, rise time and fall time of the output waveforms of the drivers are monitored. The test results will be discussed, and will help produce the specifications of an integrated SOI-based core-driver with the necessary functionalities to drive an inverter up to 220°C ambient temperature.