Abstract
We report a significant increase in electroluminescence from GaSb based Long-wave infrared (LWIR) inter band cascade (IC) LED device by substrate thinning and isolating pixel from each other. We use bottom emitting LWIR LED array for isolating each pixel by chemical etching. We observed 300% increase in light emission power of etched device. We fabricated an IC LED device with thirty cascade active/injection layers with InAs/Ga<sub>1-x</sub>In<sub>x</sub>Sb/InAs quantum well (QW) active region.
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