Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer

Abstract

The characteristics of InGaN-based blue light-emitting diodes (LEDs) with an AlGaN/GaN superlattice (SL) electron-blocking layer (EBL) of gradual Al molar fraction below the active region are analyzed numerically. The output power, internal quantum efficiency, electrostatic fields, energy band diagrams, carrier concentrations, radiative recombination, and electron leakage current are investigated. The results indicate that the LED with n-type AlGaN/GaN SL EBL of gradual Al molar fraction has smaller electrostatic fields and lower electron leakage in its active region than the LED with a rectangular p-AlGaN EBL or n-AlGaN EBL. These result in a markedly reduced efficiency droop.