Performance of bifacial HIT solar cells on n-type silicon substrates

Abstract

The performance of amorphous silicon (a-Si:H) / crystalline silicon (c-Si) heterojunction is studied, and the effects of the emitter layer thickness, doping concentration, intrinsic layer thickness, back heavily-doped n layer, interface state and band offset on the optical and electrical performance of bifacial heterojunction with intrinsic thin-layer (HIT) solar cells on ntype silicon substrates are discussed. It is found that the HIT solar cells on n-type substrates can obtain a higher conversion efficiency than those on p-type substrates by calculating the band diagrams and parameters of HIT solar cells.