Abstract
In this study, a standard 650 V enhancement-mode (E-mode) AlGaN/GaN HEMT integrated with a current limiting diode (CLD) on a Si substrate is proposed, forming a new configuration (CLD-HEMT) that does not require extra process steps or costs. A CLD is designed from a 650 V AlGaN/GaN HEMT by shorting the gate and source. The proposed CLD-HEMT demonstrates improved gate capability with an increased input gate voltage swing (>11 V) and enhanced gate reliability in a scenario where a conventional p-GaN gate HEMT would be challenged. Furthermore, the breakdown voltage and reverse conduction are improved in the CLD-HEMT.
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