Abstract
An AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT), with sodium beta-alumina (SBA) for both gate insulation and surface passivation, was investigated and compared with a conventional metal—semiconductor high-electron-mobility transistor (MESHEMT). The measured gate leakage current of the MISHEMT was reduced by approximately one order of magnitude as compared with that of the conventional MESHEMT. The saturation drain current of the AlGaN/GaN MISHEMT reached 830 mA/mm, which was about 43% higher than that of a conventional MESHEMT. The peak extrinsic transconductance of the MISHEMT was 103 mS/mm, which was similarly higher than that of the MESHEMT. The results suggested that the SBA thin film is an effective candidate gate dielectric for AlGaN/GaN MISHEMTs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.