Abstract
Direct current and direct-coupled FET logic (DCFL) characteristics of AlGaInP/InGaAs enhancement/depletion-mode pseudomorphic doping-channel field-effect transistors (DCFETs) are demonstrated by experimental results. After wet selectively etching process, the enhancement-mode pseudomorphic DCFET with single doping channel is formed. A large forward gate voltage up to +3 (2.6)V is observed for the depletion-mode (enhancement-mode) device for the presence of a relatively large conduction band discontinuity at Al0.15Ga0.35In0.5P/In0.1Ga0.9As heterojunction. In the depletion-mode device with double doping channels, the drain-to-source saturation voltage is only 0.5V as the VGS is fixed at 0V. A maximum extrinsic transconductance of 235 (274)mS/mm and a threshold voltage of −1.3 (+0.36)V are observed in the depletion-mode (enhancement-mode) device. Furthermore, the noise margins NMH and NML are of 0.108V (0.534V), and 0.390V (0.417V) at a supply voltage of 1.5V (2.0V) in the DCFL application.
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