Abstract
AbstractPreconditioning strategies based on incomplete LU factorization using thresholding with dual dropping (ILUT) are investigated for iterative solution of sparse linear systems arising in semiconductor dopant diffusion modelling. Of particular interest are questions associated with selection and adaption of threshold parameters with spatial resolution, timestep in the adaptive ODE integrator and the problem physics. We investigate these issues and carry out detailed numerical studies in one‐ and two‐dimensions for a representative phosphorus diffusion model. Guidelines for optimally selecting the threshold parameters are deduced from the results, and strategies for adaptive parameter selection are presented. Copyright © 2002 John Wiley & Sons, Ltd.
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