Abstract
GdVO 4 as a host for thulium has several advantages for diode pumping. The absorption cross section of thulium in GdVO 4 is considerably stronger and broader than in YAG and YLF, and the spectrum is shifted closer to the emission wavelength of commercially available AlGaAs laser diodes. In our paper we compare the 2 μm transition in Tm:GdVO 4 with the one in Tm:Ho:GdVO 4. The population dynamics in the two crystals is discussed. Furthermore, we report on the optimisation of a Tm 3+(6.9 at.%):GdVO 4 microchip laser with respect to high efficiency. CW lasing is established at room temperature in a wavelength range around 1.95 μm. The lowest threshold achieved is 310 mW and the highest slope efficiency is 21%.
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