Abstract

Two important parameters of solar cell is diode ideality factor(n) and reverse saturation current(I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">O</sub> ). According to the operation of a photovoltaic cell, the short circuit current is directly proportional to the intensity and open circuit voltage is directly proportional to the natural logarithm of the intensity. The open circuit voltage follows the relationship: equation Where we can see both ideality factor and reverse saturation current are related with the open circuit voltage generation which is ultimately reflected in the maximum voltage or maximum power point tracker (mppt) point. Thus there a closed loop on n and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">O</sub> of a PV cell is needed for their impact in operation in field conditions, as the input of inverter sense the grid which is controlled by V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</sub> of PV module. So there need a study on the characteristics of n and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">O</sub> at variable intensity point. The main aim of this paper is to describe this study on two commercial silicon modules, both in laboratory and field condition. The studies indicated the evaluation technique of n and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">O</sub> and their impact in power exporting in the grid connected system.

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