Abstract
Improved bandwidth of a large aperture nitrogen implanted GaAs photoconductive THz emitter is presented in this paper. An effect of nitrogen ion implantation on semi-insulating GaAs has been studied in a sample implanted at two doses: 3×10 14 and 6×10 14 ions/cm 2 . The carrier life time of the investigated material was measured by means of the femtosecond time-resolved-reflectance technique. The implantation process reduced the carrier lifetime of GaAs by 65%.The bandwidth of the THz emitter was tested in a Time Domain Spectroscopy arrangement. Usable bandwidth of the TDS set-up based on the implanted emitter increased from 1 to 1.5THz. Full Text: PDF
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
