Abstract
Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1-20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of such Compton telescopes is the high energy resolution that is crucial for high angular resolution and high background rejection capability. The energy resolution around 1 keV is required to approach physical limit of the angular resolution due to Doppler broadening. We have developed a low noise front-end ASIC (Application-Specific Integrated Circuit), VA32TA, to realize this goal for the readout of Double-sided Silicon Strip Detector (DSSD) and Cadmium Telluride (CdTe) pixel detector which are essential elements of the semiconductor Compton telescope. We report on the design and test results of the VA32TA. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at 0 C with a DSSD and 1.7 keV (FWHM) with a CdTe detector.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
