Abstract
This paper presents the development and experimental evaluation of a 25kW, 700V galvanically isolated bidirectional converter based on silicon carbide (SiC) MOSFETs and Schottky diodes. Compared with a similarly rated silicon (Si) IGBT version, the SiC converter exhibits a 3% improvement in peak efficiency, 2.6 times reduction in total losses, and three times improvement in power density.
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