Abstract
A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction bipolar transistor (HBT) differential pairs. The peak gain of the grid was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output matches are better than 15 dB at 10 GHz. The maximum output power is 450 mW, and the minimum noise figure is 7dB. Tests show that the grid is quite tolerant of failures - the output power dropped by only 1 dB when 10% of the inputs were detuned. The device amplifies beams with incidence angles up to 30° with less than a 3-dB drop in power. By providing external feedback with a twist reflector, the grid amplifier can be used as a 6.5-GHz to 11.5-GHz tunable source with a peak effective radiated power (ERP) of 6.3 W at 9.9 GHz.
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