Abstract
Thin crystalline silicon (c-Si) solar cells with a thickness of 6 μm on glass substrate are fabricated. In this study, the top thin layer of silicon-on-insulator (SOI) wafers is used to realize single c-Si films. It is found that the achieved efficiency of the cell is about 8% by only preparing surface passivation without the textured structure. This value is much higher than the case of bulk c-Si solar cells if the efficiency is converted with respect to the sample thickness. It is suggested that thinner c-Si solar cells are useful for saving materials by maintaining cell efficiency properly.
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