Abstract
Contact electrification nanogenerators (CENGs) were fabricated, and their output performance was modulated by controlling the doping concentration of fluorine-doped SnO2 (FTO) thin films. As the fluorine source content was increased from 0.8 to 1.2 mM during spray pyrolysis deposition, the electron concentration in the FTO thin film increased from 1.84 × 1020 to 5.22 × 1020 cm−3, which is much larger than the Mott critical carrier concentration of SnO2. The output voltage and current from the CENGs which were fabricated by the aluminium and FTO surfaces increased from 2.76 to 5.66 V and from 0.003 to 0.005 μA/cm2 when controlling the electron concentration in the FTO layer from 5.22 to 1.84 × 1020 cm−3. The modulation of the output performance of the CENGs originated from the change in work function of the FTO layer by Burstein-Moss shift.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
