Performance measurement for a new low dark count UV-SiPM

Abstract

Solid state detectors operating in Geiger mode such as the silicon photomultiplier (SiPM) are poised to replace currently used photomultiplier tubes in many applications due to their robustness, dimension and magnetic insensibility. A next generation SiPM well suited for near UV photons with low dark count rate has been developed. 1 mm, 3 mm and 5 mm devices with 25, 50 and 100 µm micro-cells and geometrical efficiencies ranging from 29% to 74% have been produced. A probability of detection of 58% in photon counting mode at 440 nm has been reached. The photon detection efficiency (PDE) thus ranges from 42% to 17% depending on the geometrical efficiency of the chip. The dark count rate varied between the different designs (25 µm to 100 µm micro-cells, 1 mm to 5 mm chips) and was in the region of 300 kcps per mm2 at room temperature and at an operating voltage maximizing the PDE. Characteristics from this novel low dark count SiPM design will be presented and compared, further developments and improvements will also be discussed.