Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector

P Martyniuk,A Rogalski

doi:10.1007/s11082-013-9849-z

Abstract

InAsSb ternary alloy is considered to be an alternative to HgCdTe (MCT) in mid-wavelength infrared spectral region. The high operation temperature conditions are successfully reached with \(\hbox {A}^{\mathrm{III}}\hbox {B}^{\mathrm{V}}\) bariodes, where InAsSb/AlAsSb system is playing dominant role. Since there is no depletion region in the active layer, the generation-recombination and trap-assisted tunneling mechanisms are suppressed leading to lower dark currents in comparison with standard photodiodes. As a consequence, the bariodes operate at a higher temperature than standard photodiodes which could be used in wide range of system applications, especially where the size, weight, and power consumption are crucial. The paper presents detailed analysis of the bariode’s performance (such as dark and photocurrent, differential resistance area product, and detectivity) versus applied voltage, operating temperatures and structural parameters. The optimal working conditions are calculated. The theoretical predictions of bariode’s performance are compared with experimental data published in the literature. Finally, the nBn InAsSb/AlAsSb performance is compared to the MCT “Rule 07”.

Highlights

Photodetectors optimized for the mid-wavelength infrared (MWIR) spectral range and high operation temperature (HOT) conditions are in demand for variety of IR systems where the size, weight, and power (SWaP) consumption are important
In standard photodiodes operating under HOT conditions, the dark current is predominantly produced by the Shockley-Read-Hall (SRH) generation recombination process (GR), Auger GR and tunneling mechanism (Rogalski 2011; Martyniuk and Rogalski 2013a)
Comparing the JDARK (V ) and JPHOTO(V ) curves presented in Figs. 3a and 4b, it is clearly visible that nBn structures may be biased above V > −600 mV due to the fact that there is no tunneling contribution and JDARK saturates, while quantum efficiency (QE) reaches its maximum value

Summary

Introduction

Photodetectors optimized for the mid-wavelength infrared (MWIR) spectral range and high operation temperature (HOT) conditions are in demand for variety of IR systems where the size, weight, and power (SWaP) consumption are important. The nBn architecture has been successfully implemented into AIIIBV bulk compounds and InAs/GaSb type-II superlatices (T2SLs). The InAs/GaSb T2SLs success has resulted from the physical properties of the “artificial” material and what is most important, the zero valence band offsets with advantageous band alignment slightly harder to attain in AIIIBV and AIIBVI bulk compounds (Ting et al 2010). T2SLs are considered to have advantage over bulk materials, there are indicators that, to the technological problems related to the growth of self-organized quantum dot infrared detectors, T2SLs’ InAs/GaSb development is limited by technological issues related to the growth of uniform and thick enough SLs (Martyniuk and Rogalski 2008). In this paper we performed the detailed analysis of the InAsSb/AlAsSb nBn detector performance versus bias, operating temperatures, and structural parameters pointing out the HOT detector’s optimal working conditions. The InAsSb/AlAsSb performance is compared to MCT “Rule 07”

Simulation procedure

Dark and photocurrent modeling

Quantum efficiency and responsivity

Detectivity

Conclusion