Abstract
An extended study of electrical characteristics of 50-nm single-material-gate insulated-shallow-extension-gate-stack (ISEGaS) MOSFET is performed using ATLAS-2D. Incorporation of dual-material-gate architecture leads to the suppression of short channel effects along with the improvement in device intrinsic gain (gmtimesRout), voltage gain (gm/IDS), and Ion/Ioff ratio, thereby opening a new era of ISEGaS MOSFETs for mixed mode applications
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