Abstract
This study focuses on the laser opening technique used to form a selective emitter (SE) structure on multicrystalline silicon (mc-Si). This technique can be used in the large-area (156 × 156 mm2) solar cells. SE process of this investigation was performed using 3 samples SE1–SE3. Laser fluences can vary in range of 2–5 J/cm2. The optimal conversion efficiency of 15.95% is obtained with the SE3 (2 J/cm2fluence) after laser opening with optimization of heavy and light dopant, which yields a gain of0.48%abscompared with that of a reference cell (without fluence). In addition, this optimal SE3 cell displays improved characteristics compared with other cells with a higher average value of external quantum efficiency (EQEavg = 68.6%) and a lower average value of power loss (Ploss = 2.33 mW/cm2). For the fabrication of solar cells, the laser opening process comprises fewer steps than traditional photolithography does. Furthermore, the laser opening process decreases consumption of chemical materials; therefore, the laser opening process decreases both time and cost. Therefore, SE process is simple, cheap, and suitable for commercialization. Moreover, the prominent features of the process render it effective means to promote overall performance in the photovoltaic industry.
Highlights
Because of the simple manufacturing process and low-cost crystalline-silicon (C-Si) material, multicrystalline Si solar cells are more widely used than single-crystalline Si solar cells in the commercial market
The diffusion barrier absorbs the heat and irradiation emitted by the laser for approximately 10 ns
The temperature quickly increases to melting point
Summary
Because of the simple manufacturing process and low-cost crystalline-silicon (C-Si) material, multicrystalline Si (mcSi) solar cells are more widely used than single-crystalline Si (sc-Si) solar cells in the commercial market. Homogenous emitters (HEs) for effective photovoltaic (PV) devices are formed on the front surface through high phosphorus concentration This is necessary because a strong metal contact reduces the resistance between a metal grid and a silicon wafer. To optimize the emitter layer, an SE structure is proposed in this study to overcome this compromise This reduces the contact resistance and surface recombination velocity and improves the performance of cells [2,3,4,5]. For the two-diffusion masking technique, an efficiency of 16% is the optimal result for cells realized using the two-diffusion SE process and etching paste ablation This technology is relatively complex and the industrialization of this process requires UV laser equipment of high throughput and power; the production cost of two-diffusion SE cells must be considered. The lightly doped region (LDR) was used to improve the passivation effect between the contact fingers to increase the PV efficiency for industrial applications
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