Abstract
Uncooled split-off band infrared detectors have been demonstrated with an operational device response in the 3–5 μm range. We have shown that it is possible to enhance this device response through reducing the recapture rate by replacing one of the commonly used flat barriers in the device with a graded barrier, which was grown using a “digital alloying” approach. Responsivity of approximately 80 μA/W (D* = 1.4 × 108 Jones) were observed at 78 K under a 1 V applied bias, with a peak response at 2.8 μm. This is an improvement by a factor of ∼25 times compared to an equivalent device with a flat barrier. This enhancement is due to improved carrier transport resulting from the superlattice structure, and a low recapture rate enabled by a reduced distance to the image force potential peak in the graded barrier. The device performance can be further improved by growing a structure with repeats of the single emitter layer reported here.
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