Abstract
This work demonstrates top-contact (TC) pentacene-based organic thin-film transistors (OTFTs) fabricated by inserting a Teflon carrier injection layer between the source/drain (S/D) metal electrodes and pentacene channel layer. Compared to devices without a Teflon layer, the inserted 1.5-nm-thick Teflon layer can enhance the drain current and field-effect mobility by 136 and 62%, respectively. The improvements are attributed to the reduction of hole injection barrier and tunneling process at the Au/pentacene interface, which can be confirmed by the reduced contact resistance measured at linear region. We therefore believe that using ultrathin Teflon as the carrier injection layer is a good candidate method to improve the TC-OTFTs performance.
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