Abstract
In this paper, by use of a new technique, the conventional SiGe-on-insulator (SGOI) structure electrical performance has been properly improved. The proposed structure includes a vertically graded channel to reduce the hole’s current rate, marvelously. Grading the channel starts from the value 0.1 at the top of the channel to the value 0.7 at the bottom the channel. As a result, the floating body effect, leakage current, and sub threshold slope are successfully mitigated in the proposed device owing to modified band energy diagram improving the proposed structure reliability. Also, the drain current enhances with respect to the conventional structure providing the proposed structure for low-voltage analog applications.
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