Abstract
A new technique to increase the output power level of laser MOSFETs ( approximately 0.1 mW) and to improve their performance (e.g. better efficiency, faster response). This technique uses a trapezoidal gate TG-MOSFET instead of the traditional rectangular gate device to pump carriers (electrons and holes) into its floating gate which acts as an optical resonant cavity besides being the active region where electrons and holes recombine radiatively and result, consequently, in the laser output. The paper comprises a detailed study and characterisation of the developed laser MOSFET, from which it is revealed that it is easier to monitor, simpler to realise and less expensive.
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