Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter

Abstract

In this work we report the fabrication of N channel transistors based on IF(CN2)2 meta molecule. The effect of IF(CN2)2 meta evaporation parameters on corresponding TFTs performances, is evaluated and highlighted here. Since the effect of deposition conditions for this molecule type has not been reported yet, here we report an improvement about 20 times of field effect mobility when deposited at substrate temperature of 80°C and deposition rate of 0.7Å/s, and then annealed at low temperature. Reached mobility of 2.2×10−3cm2/V·s, is comparable to reported μFE of single crystal indenofluorene TFTs. The optimum mobility in these evaporation conditions was explained by the best compromise between the grain size and packing density of films. Fabricated IF(CN2)2 meta based devices are combined to 6,13-Bis(triisopropylsilylethynyl)pentacene devices and then integrated into a CMOS inverter logic circuit. The inverter’s VTC shows large output voltage swing. Electrical stability of the performed inverter was also evaluated and the inverter shows a correct electrical stability, after 3h of non-stop operation and the peak to peak magnitude corresponding to VOUT decreases only by 2.6%.