Abstract
Gallium Nitride (GaN) based high-electron-mobility transistors (HEMTs) are leading candidates for high-performance RF amplifiers, particularly for wireless communication applications. RF switching and routing is another key application in wireless systems. In this work, GaN HEMTs integrated with Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) ferroelectric (FE) gate stacks are used to improve the performance of RF switches at mm-wave frequencies. FeHEMTs with high switch figure of merit (FOM), low insertion loss of 1.4 dB and high isolation > 19.4 dB at 30 GHz have been fabricated and characterized. Study of the bias- and frequency-dependent response of metal-ferroelectric-metal (MFM) capacitors, in conjunction with modeling based on the Landau-Khalatnikov formalism, are used to understand the experimental results. This study shows that the observed reduction in RF capacitance arises from dispersion in the HZO film. This provides a simple approach to achieve high performance in RF/millimeter-wave switching applications.
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