Abstract

As a promising technology for the machining of large-sized Si wafer, chemo-mechanical grinding (CMG) integrates the advantages of fixed abrasive machining and chemical mechanical polishing (CMP), and hence can generate superior surface quality comparable to that by CMP while maintaining the high geometric accuracy. In order to enhance the material removal rate (MRR), attain the work-surface with little damage or defects, and then promote the popularisation of CMG, a new combined grinding method, i.e., elliptical ultrasonic vibration assisted CMG (EUA-CMG), is proposed. Some analysis and experiments were conducted to reveal the processing characteristics of EUA-CMG of single crystal silicon. The result shows that compared with the conventional CMG without ultrasonic vibration, better surface quality and higher MRR can be attained in EUA-CMG.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.