Performance Improvement of Ambipolar Organic Field Effect Transistors by Inserting a MoO3 Ultrathin Layer

Abstract

We fabricate N, N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and pentacene heterostructure organic field effect transistors with a MoO3 ultrathin layer between Al source-drain electrode and active layer. By inserting the MoO3 layer, the injection barrier of hole carriers is lowered and the contact resistance is reduced. Thus, the performance of the device is improved. The device shows typical ambipolar transport characteristics with effective hole mobility of 4.838 × 10−3 cm2/V·s and effective electron mobility of 1.909 × 10−3 cm2/V·s, respectively. This result indicates that using a MoO3 ultrathin layer is an effective way to improve the performance of ambipolar organic field effect transistors.