Abstract
We report fabrication of AlGaN/GaN high electron mobility transistor (HEMT) with improved DC, high frequency and microwave power performances by employing a two-step passivation approach. A pretreated AlGaN surface is provided by dry etching n+-GaN cap layer and RTA annealing ohmic contacts right before Si3N4 passivant is deposited. No additional process step is associated with the surface preparation for the passivation process. Pulsed I-V characteristics show that the proposed passivation process successfully eliminates trapping effect at Si3N4 and AlGaN interface and is considered to be the important factor for the performance enhancement. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1614–1619, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25266
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